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The first 900-V SiC MOSFET suits high frequency power

Posted on May 26, 2015 by  

The C3M0065090J is the industry’s first 900-V MOSFET platform and is optimized for high-frequency power electronics applications.

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The C3M0065090J is rated at 900 V/32 A, with an RDS(ON) of 65 mΩ at 25°C. At TJ = 150°C, the RDS(ON) is 90 mΩ. The device is available in standard TO247-3 and TO220-3 packages, and also in a low-impedance D2Pak-7L surface mount package with a Kelvin connection to help minimize gate ringing.

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