Toshiba Expands GaAs FETs Lineup With Four Power Added Amplifiers Optimized For Power Efficiency

Toshiba Expands GaAs FETs Lineup With Four Power Added Amplifiers Optimized For Power Efficiency

High Gain, High Power Added Efficiency Lineup Includes GaAs Amplifiers for Microwave Radios and BUCs

IRVINE, Calif., June 16, 2008 — Toshiba America Electronic Components, Inc. (TAEC*) announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with four new devices optimized for power efficiency. The Power Added Efficiency enhanced GaAs FETs, developed by Toshiba Corp. (Toshiba), are targeted for microwave radio s and block up converters (BUCs) and will be exhibited in TAEC’s booth, #1701, at the 2008 IEEE MTT-S International Microwave Symposium, which will be held June 15 through 20 in Atlanta, Georgia.

Two new X-band GaAs FETs for microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications, the TIM1011-2UL and the TIM1011-8UL, operate in the 10.7 to 11.7 GHz1 range. The TIM1011-2UL has an output power at one-dB gain compression point of 2W, or 33.5dBm (typ.), linear gain of 9.5dB (typ.) and power added efficiency of 36 percent. The TIM1011-8UL features an output power at one-dB gain compression point of 8W, or 39.5dB m (typ.) , linear gain of 9.0dB (typ.) , and power efficiency of 39 percent.

For satellite applications, Toshiba has added two 30W C-band power amplifiers that operate in the 5.9 to 6.4 GHz and 7.7 to 8.5 GHz range. Both are targeted for use in BUC applications for very small aperture terminals (VSAT) and solid-state power amplifiers (SSPAs ). The TIM 5964 – 30 UL has an output power at one-dB gain compression point of 45 dBm (typ.), gain of 10dB (typ.) and power efficiency of 41 percent . The TIM 7785 – 30 UL features an output power at one-dB gain compression point of 45 dBm (typ.) , gain of 9dB (typ.) and power efficiency of 39 percent.

“In the conversion from old analog transmission technology to digital in the telecommunication industry, system operators need to install more equipment or boards into the same limited space, and are asking microwave communication system designers to develop smaller and lighter systems. The improved efficiency of these power amp lifier s will help microwave designers ease thermal management in their BUC and SSPA designs such as smaller heat sinks and possible fan-less configurations contributing to reduced size and weight of the overall system ,” said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC’s Discrete Business Unit. “ In addition, Toshiba is also developing high gain and high Power Added Efficiency FETs for Ku-band to address to SATCOM market.”

Technical Specifications:

Product Characteristic TIM1011-2UL TIM1011-8UL TIM5964-30UL TIM 7785 -30UL

Frequency 10.7-11.7GHz 10.7-11.7GHz 5.9-6.4GHz 7.7 – 8.5 GHz

Output Power, P1dB (typ.) 2W 8W 30W 30W

Gain, G1dB (typ.) 9.5dB 9.0dB 10.0dB 9.0dB

Power Efficiency 36% 39% 41% 39 %

Pricing and Availability

Samples of the Toshiba Power Added Efficiency GaAS family are available now. For pricing, please contact your Toshiba representative.

Toshiba Microwave Product Overview

Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company’s line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include personal communications systems (PCS), multi channel distribution systems (MMDS), Wireless LAN/WAN systems, point-to-point terrestrial microwave radio, wireless local loop (WLL), satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems, mobile communications, and other communication systems. Toshiba is also expanding its family of higher gain, higher output power GaN devices for applications in satellite communications, terrestrial point-to-point communications, radar systems and medical uses.

*About Toshiba Corp. and TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today’s leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan’s largest semiconductor manufacturer and the world’s third largest semiconductor manufacturer (Gartner, 2007 WW Semiconductor Revenue, April 2008). For additional company and product information, please visit http://www.toshiba.com/taec/.

1 For purposes of measuring frequency in this context, one Gigahertz (GHz) = 1,000,000,000 cycles per second.

Two new X-band GaAs FETs for microwave digital radios supporting point-to-point and point-to-multipoint terrestrial communications , the Toshiba TIM1011-2UL and TIM1011-8UL, operate in the 10.7 to 11.7 GHz 1 range, with output power of 2W AND 8W, respectively.

For satellite applications, Toshiba has added two 30W C -band power amplifiers, TIM5964-30UL (shown) and TIM7785-30UL, which operate in the 5.9 to 6.4 GHz and 7.7 to 8.5 GHz range, intended for use in satellite block up converter (BUCs) applications for very small aperture terminals (VSAT) and solid-state power amplifiers (SSPA s ).

Information in this press release, including product pricing and specifications, content of services and contact information, is current and believed to be accurate on the date of the announcement, but is subject to change without prior notice. Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba’s “Handling Guide for Semiconductor Devices,” or “Toshiba Semiconductor Reliability Handbook.” This information is available at chips.toshiba.com or from your TAEC representative.