TOSHIBA EXPANDS GaN HEMT PRODUCT FAMILY WITH POWER AMPLIFIERS FOR Ku-BAND SATCOM AND X-BAND RADAR APPLICATIONS

TOSHIBA EXPANDS GaN HEMT PRODUCT FAMILY WITH POWER AMPLIFIERS FOR Ku-BAND SATCOM AND X-BAND RADAR APPLICATIONS

High Power, High Gain Devices Include Toshiba’s First GaN Amplifier for SATCOM, and an X-Band Amplifier for Radar Applications

IRVINE, Calif., June 16, 2008 — Toshiba America Electronic Components, Inc. (TAEC) announced the addition of two new gallium nitride (GaN) semiconductor High Electron Mobility Transistors (HEMTs), developed by Toshiba Corp. (Toshiba), to its power amplifier product family. The new products will be on display at the 2008 IEEE MTT-S International Microwave Symposium, which will be held June 15 through 20 in Atlanta, Georgia.

The first GaN HEMT for satellite communication applications from Toshiba, the Ku-band TGI1414-50L, operates in the 14.0GHz1 to 14.5GHz range with output power of 50W. The device features output power of 47.0dBm (typ.), with 42dBm input power , linear gain of 8.0dB (typ.) 2 and drain current of 5.0 Amps (typ.)2 . Targeted applications are SATCOM applications, such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT). An extended Ku-band power amplifier for the 13.75GHz to 14.5GHz range will be released in the near future.

The X-band TGI0910-50 operates in the 9.5GHz to 10.5GHz range with output power of 50W. It features output power of 47.0dBm (typ.) 2 with 41dBm input power , linear gain of 9.0dB (typ.) 2 and drain current of 4.5 Amps (typ.) 2 . Targeted applications include Doppler radar that can detect the motion of rain droplets and intensity of precipitation for severe weather warning, and Doppler radar for border surveillance and security.

“The expansion of our GaN power amplifier family brings higher power and higher gain features to microwave designers, which reduces heat sink requirements with smaller part counts and enables smaller systems with higher performance and efficiency,” said Homayoun Ghani, business development manager, Microwave, Logic, and Small Signal Devices, in TAEC’s Discrete Business Unit. “Additional GaN C-band SATCOM and Ku-band devices for broadband and radar applications are in development.”

Technical Specifications:

Product Characteristic TGI1414-50L TGI0910-50

Frequency 14.0 – 14.5GHz 9.5–10.5GHz

Output Power, Pout(typ.) 47.0dBm 47.0dBm

Linear Gain, GL(typ.) 8.0dB 9.0dB

Drain Current, VDS/IDS(typ.) +24V/5.0A +24V/4.5A

Efficiency 29% 35%

Package 7- AA04A 7- AA04A

Pricing and Availability

Samples of the TGI1414-50L are available now, with mass production scheduled for third quarter, 2008. Samples of the TGI0910-50 will be available in third quarter, 2008. For pricing, please contact your Toshiba representative.