By Gina Roos, editor-in-chief
Toshiba Memory America, Inc. (TMA) unveiled its new Storage Class Memory (SCM) solution called XL-FLASH. Based on the company’s BiCS FLASH 3D flash memory technology with 1-bit-per-cell SLC, XL-FLASH delivers increased speed, reduced latency, and higher storage capacity at a lower cost than DRAM for data center and enterprise storage applications.
Toshiba, which touts SCM as the next frontier for enterprise storage, said XL-FLASH bridges the performance gap between DRAM and NAND. The SCM, or persistent memory, retains stored data like NAND flash and provides the speed, latency, and storage capacity at a lower cost than DRAM as the cost-per-bit and DRAM scalability levels off. SCM can be used to replace traditional hard-disk drives (HDDs) or solid-state drives (SSDs).
Key specs include:
- 128-gigabit (Gb) die (in a 2-die, 4-die, 8-die package)
- 4-KB page size for more efficient operating system that reads and writes
- 16-plane architecture for more efficient parallelism
- Low read latency of less than 5 microseconds, approximately 10-x faster than existing TLC2
XL-FLASH will initially be deployed in a SSD format but could be expanded to memory channel attached devices on the DRAM bus, such as non-volatile dual in-line memory modules (NVDIMMs). Sample shipments will start in September, with volume production to follow in 2020.
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