Transistor raises I capability by 50%

The 3STR1630 npn transistor increases the current capability by about 50% for the same die size. It features high-current capability, collector-emitter blocking voltage, and low collector-emitter saturation voltage. It suits LED drivers, motor and relay drivers, and dc/dc converter applications.

The transistor incorporates a double-metal process that allows the cell density to be almost doubled without requiring the use of photolithography equipment. The double-metal process enables transistors with VCEO ratings up to 100 V, switching frequencies up to 300 kHz, and a 40% reduction in VCE(sat) . It has a minimum BVCEO of 30 V, with an equivalent on-resistance of 100 mΩ at an hFE figure of 50. It can handle a 6-A continuous current and is housed in an SOT-23 package. ($0.24 ea/1,000 — available now.)

By Paul O’Shea

STMicroelectronics , Lexington , MA
Information 781-861-2650
www.st.com