Intended for use in wireless applications such as IEEE 802.11 a/b/g wireless LAN routers and terminals, RF tag readers and writers, and digital cordless phones, the RQG2003 power HBT has an efficiency approximately 20% greater than previous devices. With a power gain of 6.4 dB at 5.8 GHz and 13.0 dB at 2.4 GHz, the device can eliminate the power amplifier modules and MMICs typically used to drive the transmitting antenna.
The 8-pin Pb-free WQFN-packaged SiGeC device has Sn-Bi electrode plating and uses a double-trench structure to reduce parasitic capacitance between the substrate and transistor. (From $0.87 ea/sample—available now.)
Renesas Technology America , San Jose , CA
Akiko Ishiyama 408-382-7407
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