Transphorm: First qualified GaN HEMT features very low energy losses

Transphorm offers the industry’s first qualified 600-V gallium nitride (GaN) device platform with its TPH3006PS GaN high-electron mobility transistor (HEMT). The GaN transistor combines low switching and conduction losses, offering reduced energy loss of 50% compared to conventional silicon-based power conversion designs. The TO-220-packaged device features an R_DS(on) of 150 mΩ, a Q_rr of 56 nC, and high-frequency switching capability that enables compact, lower-cost systems. The devices simplify the design and manufacturing of a wide variety of electrical systems and devices, including power supplies and adapters, PV Inverters for solar panels, motor drives and power conversion for electric vehicles.