Trench IGBTs reduce power dissipation 30%

A family of 600-V insulated gate bipolar transistors (IGBTs) reduces power dissipation by 30% in UPS, and up to 3 kW in solar inverter applications. The application-specific devices uses field-stop trench technology to reduce conduction and switching losses, and are optimized for switching at 20 kHz with low short-circuit requirements, enabling high-efficiency power conversion.

Copackaged with soft recovery diodes, the IGBTs have lower collector-to-emitter saturation voltage (VCE(on) ) and total switching energy than punch-through and non-punch-through type IGBTs. The internal soft recovery diode improves efficiency and reduces EMI. (Ea/10,000:

IRGB4059DPbF: $0.68, IRGB4045DPbF: $0.82, IRGB4060DPbF: $0.84, IRGB4064DPbF: $1.00 and IRGP4063DPbF: $2.79.)

International Rectifier , El Segundo , CA
Graham Robertson 310-726-8512

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