UMC’s Embedded DRAM, URAMTM Proven in 65nm Customer Silicon

UMC’s Embedded DRAM, URAMTM Proven in 65nm Customer Silicon

Pure-play foundry industry’s only proprietary embedded DRAM solution enables performance, size and cost advantages for SoC products

HSINCHU, Taiwan, August 4, 2008 — UMC (NYSE: UMC; TSE: 2303), a leading global semiconductor foundry, today announced that it has produced functional 65nm customer products incorporating URAM, the company’s patented embedded DRAM (eDRAM) technology. URAM enables higher performance, lower power consumption, and reduced chip size compared to traditional embedded 6T SRAM or external DRAM. URAM, which is the only available proprietary embedded DRAM solution in the pure-play foundry industry, is already in production at UMC for 90nm customer products.

Raymond T. Leung, vice president of memory IP development at UMC, said, “The advanced products that power today’s digital economy require sophisticated technology solutions to satisfy the rigorous demands for lower power consumption, higher performance, and smaller form factor. UMC’s URAM effectively addresses the needs of SoC designs for a broad range of applications, including storage media, communications, and graphics and imaging systems, by providing a high-density memory that delivers up to a 50 percent area reduction over standard 6T SRAM.”