Vertical architecture gives RF designers an LDMOS alternative
As RF power amplifier designers weigh cost, efficiency, linearity, thermal performance and peak power in transistors, Phoenix, Ariz. based fabless semiconductor start-up HVVi Semiconductors, Inc., is giving engineers a new silicon alternative. Unlike LDMOS, the company has taken vertical path to far exceed the capabilities of current bipolar and LDMOS transistors. www.hvvi.com
According to the developer, it has developed an unprecedented high frequency, high voltage vertical FET (HVVFET) architecture that delivers an unsurpassed frequency bandwidth, voltage and power levels to radar and avionic applications. In short, HVVi claims to have readied a revolutionary new patent-pending architecture to achieve performance levels comparable to non-silicon technologies at much more attractive cost levels.
The patent pending HVVFET is developed by a team of experts, which includes Bob Davies, the key inventor of LDMOS. The HVVFET is implemented in mature CMOS. And the company will utilize ON Semiconductor for wafer fabrication and Richardson Electronics for worldwide distribution.
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