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Vishay expands line of SiC Schottky diodes

Vishay has added 17 Gen 3 650-V SiC Schottky diodes, delivering lower forward voltage, capacitive charge and reverse leakage current.

Vishay Intertechnology, Inc. has launched 17 Gen 3 650-V silicon carbide (SiC) Schottky diodes. Thanks to a merged PIN Schottky (MPS) design, the new SiC Schottky diodes from Vishay Semiconductors offer high surge current robustness with low forward voltage drop, capacitive charge and reverse leakage current for higher efficiency and reliability in switching power designs.

Vishay said the MPS structure reduces the forward voltage drop by 0.3 V compared to previous-generation solutions, while the forward voltage drop times capacitive charge — a key figure of merit (FOM) for power efficiency — is 17% lower. In addition, the Schottky diodes’ typical reverse leakage current is 30% lower at room temperature and 70% lower at high temperature than the closest competing solution, according to the company. The result is lower conduction losses for high system efficiency during light loads and idling.

Vishay's Gen 3 SiC Schottky diodes.

(Source: Vishay Intertechnology)

The Gen 3 devices also “have virtually no recovery tail, which further improves efficiency,” said Vishay. The reverse recovery times are nearly temperature-independent, the company added, enabling operation at up to 175°C without the shifts in power efficiency caused by switching losses.

The new SiC diode portfolio is comprised of 4-A to 40-A devices. They are available in TO-22OAC 2L and TO-247AD 3L through-hole and D²PAK 2L (TO-263AB 2L) surface-mount packages. The SiC devices are said to offer higher thermal conductivity, lower reverse current and shorter reverse recovery times, compared to silicon diodes.

The devices have passed higher temperature reverse bias (HTRB) testing of 2,000 hours and temperature cycling testing of 2,000 thermal cycles. Vishay said this is double the testing hours and cycles of AEC-Q101 requirements. Typical applications include AC/DC PFC and DC/DC ultra-high frequency output rectification in FBPS and LLC converters for energy generation and exploration applications.

The SiC diodes are available for sampling and production quantities with lead times of eight weeks. Pricing for U.S. delivery starts at $1.29 each in quantities of 1,000.

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