Wolfspeed introduced a 1,000-V MOSFET that the company says enables a reduction in overall system cost, while improving system efficiency and decreasing system size. It’s optimized for fast-charging and industrial power supplies, enables a 30% reduction in component count while achieving a more-than-three-times increase in power density and a 33% increase in output power.
The electric vehicle market needs, and is always looking for, higher efficiency and wider output voltage ranges, especially for all of the electric vehicle battery voltages being introduced by automotive suppliers. This will no doubt enable smaller, more efficient charging systems that have higher-power charging, and probably have lower overall cost.
The 1,000-V, 65-mΩ MOSFET is available in a through-hole, 4L-TO247 package, is listed as part number ,9/.cp?@2809457.lp?@083:&re=mc&ri=2738402&preview=false&distributionactionid=2016&action=follow-link”>Download the datasheet.
These SiC MOSFETs offer fast switching speeds with much lower switching loses than silicon MOSFETs. The figure-of-merit is also better than silicon-based MOSFETs. The SiC MOSFET also enables designers to reduce component count by moving from silicon-based, three-level topologies to simpler two-level topologies made possible by the 1000-Vds rating of the SiC MOSFET. The output capacitance is as low as 60 pF, which significantly lowers switching losses. This device enables operations at higher switching frequencies, which shrinks the size of the resonant tank elements and decreases overall losses, thus reducing heatsink requirements. Wolfspeed has determined these proof-points by constructing a 20-kW full-bridge resonant LLC converter and comparing it to a market-leading 15-kW silicon system.
Wolfspeed offers a 20-kW full-bridge resonant LLC converter reference design, listed as part number ,9/.cp?@2809457.lp?@083:&re=mc&ri=2738402&preview=false&distributionactionid=2018&action=follow-link”>go.wolfspeed.com/referencedesigns.
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