Wolfspeed releases 900-W L-band GaN HEMT for radar

Internally matched on input and output, the 900-W, 50-V GaN HEMT also exhibits 14-dB power gain and < 0.3-dB pulsed amplitude droop. The device is supplied in a ceramic/metal flange package that can be shipped individually or alongside or installed on a test board. Although the minimum power is 800 W, the newest version of the CGHV14800 features a typical performance of 870−920 W from 1.2 to 1.4 GHz at 25°C.  

Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, this GaN-on-SiC RF device delivers a higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving smaller, lighter, and more efficient microwave and RF products. In addition to L-Band radar power amplifiers, the GaN-on-SiC RF devices are also enabling next-generation broadband, public safety, and ISM amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.