By Gina Roos, editor-in-chief
ON Semiconductor is set to launch its new silicon-carbide (SiC)-based hybrid IGBT and related isolated high-current IGBT gate driver at the PCIM Europe 2019 Exhibition and Conference in Nuremberg, Germany, on May 7.
The AFGHL50T65SQDC hybrid IGBT offers low conduction and switching losses in multiple power applications thanks to the latest field-stop IGBT and SiC Schottky diode technology. The device consists of a silicon-based IGBT with a SiC Schottky barrier diode, which addresses the tradeoff between the lower performance of silicon-based solutions and higher cost of SiC-based solutions, said ON Semi. Wide-bandgap semiconductors are known to offer performance advantages (higher bandgaps, lower conduction losses, and ruggedness) over silicon-based products.
The hybrid IGBT is rated for 650-V operation and can handle continuous currents up to 100 A @ 25°C (50 A @ 100°C), as well as pulsed currents up to 200 A. For systems requiring greater current capability, designers can use a positive temperature coefficient for parallel operation.
The AEC-Q101−qualified AFGHL50T65SQDC can operate with junction temperatures as high as 175°C, making it suitable for demanding power applications, including automotive such as on-board electric vehicle (EV) and hybrid EV chargers.
ON Semi also will release a range of isolated high-current IGBT drivers at PCIM. Target power applications for the NCD(V)57000 series include solar inverters, motor drives, uninterruptible power systems (UPS), and automotive applications such as powertrain and PTC heaters.
The high-current single-channel IGBT drivers with internal galvanic safety isolation are designed to provide high efficiency and high reliability. Features include complementary inputs, open drain fault and ready outputs, an active Miller clamp, accurate undervoltage lockout (UVLO), DESAT protection with soft turn-off, negative gate voltage pin, and separate high and low driver outputs for system design flexibility.
Key specs for the NCD(V)57000 include galvanic isolation at greater than 5 kVrms, a working voltage of greater than 1,200 V, and 8-mm creepage distance (input > output) to meet reinforced safety isolation requirements. ON Semi said that the devices can source 7.8-A drive current and sink 7.1 A, which is more than three times the capability of some competing devices, and they have a greater current capability while operating in the Miller plateau.
These two products expand ON Semi’s growing SiC product portfolio. In March, ON Semi launched two new SiC MOSFETs — an industrial-grade and AEC-Q101 automotive-grade — for applications such as automotive DC/DC and on-board chargers for EVs and uninterruptible and server power supplies.
Advertisement
Learn more about Electronic Products Magazine
