By Heather Hamilton, contributing writer
Texas Instruments Inc. (TI) recently released several 600-V gallium-nitride (GaN) 50-mΩ and 70-mΩ power stages to support applications up to 10 kW. The new LMG341x family allows designers to create smaller designs that are more efficient and offer higher performance as compared to silicon field-effect transistors (FETs) in AC/DC power supplies, robotics, renewable energy, grid infrastructure, telecom, and personal electronics applications, said the company.
The portfolio of GaN FET devices, which the company said is backed by 20 million hours of reliability testing, offers an alternative to traditional cascade and standalone GaN FETs. By integrating functional and protection features, TI simplifies design, enabling greater system reliability and higher performance of high-voltage power supplies.
Each device offers a GaN FET, driver, and protection features at 50 mΩ or 70 mΩ to provide a single-chip solution for applications ranging from sub-100 W to 10 kW. The LMG3410R050, LMG3410R070, and LMG3411R070 devices come complete with integrated <100-ns current limiting and overtemperature detection and protect against accidental shoot-through events. They also prevent thermal runaway and, with the help of system interface signals, facilitate self-monitoring.
The GaN power stage doubles power density and claims to reduce losses by 80% compared to silicon MOSFETs. The devices switch frequencies at a rate of 1 MHz and have a slew rate of up to 100 V/ns.
The LMG3410R050, LMG3410R070, and LMG3411R070, available in 8 × 8-mm split-pad, QFN packages, are priced at $18.69, $16.45, and $16.45, respectively, in quantities of 1,000.
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