Chipmakers are confident in wide-bandgap materials making big gains in the power electronics market, expanding their product offerings and volume...
The 650-V SiC FET family added seven new devices in TO220-3L and D2PAK-3L device/package...
The new 1,200-V Schottky diodes in a TO247-2 package can replace silicon diodes for higher efficiency in automotive, solar energy, and industrial...
The 650-V, 150-A GaN power transistor boasts 100× lower switching losses than comparable...
Layout optimization is the foundation of the design to avoid parasitic components that add noise or spikes to the applied voltages or...
New SiC MOSFETs are qualified to work in industrial and automotive...