Power MOSFET cuts on-resistance by 27%
Vishay’s 600-V E Series power MOSFET lowers conduction and switching losses, while providing higher current in a smaller...
Discrete Semiconductors
LATEST ARTICLES
CoolSiC MOSFETs offer breakdown voltage of 2,000 V
Infineon claims its latest CoolSiC MOSFETs are the first discrete SiC devices on the market with a breakdown voltage of 2,000...
Integrated GaN HEMT ICs save board space
Innoscience’s family of 700-V integrated GaN HEMT ICs reduce component count and design...
EPC claims lowest on-resistance GaN FET
EPC unveils the first GaN FET with 1-mΩ on-resistance in a QFN package for DC/DC conversion, fast charging, motor drives and solar...
Nexperia expands MOSFET families
Nexperia announced two MOSFET product line expansions at APEC 2024, including space-saving ASFETs for PoE and 40-V NextPowerS3...
Rohm improves Schottky barrier diodes
Rohm’s 100-V Schottky barrier diodes with a proprietary trench MOS structure deliver industry-leading reverse recovery time for high-speed switching...
