Temp protected MOSFET replaces electromechanical switches
The HITFET+ family of low side switches replaces electromechanical relays and targets automotive and industrial...
Discrete Semiconductors
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High-V GaN performance finds new wins in power markets
Power engineers are looking to GaN circuits because of low output capacitance, low reverse recovery, and high-voltage spike...
GaN power transistors break Si cost-speed barriers
The EPC2035 and EPC2036 eGaN power transistors offer superior performance, smaller size, and high reliability at the price of a...
Single-phase 25-A SCRs withstand large current
The ASCT625A series of silicon controlled rectifiers (SCRs) is a 25 A, single-phase device provided in a standard TO-220A...
10 to 30 A rectifiers target automotive use
Sixteen, 10 to 30-A fast recovery rectifiers in a low-profile 1.7-mm height TO-263AC package, suit automotive and telecom...
40 V MOSFETs deliver industry-low RDS(on)
The TPHR8504PL 40-V power MOSFET from Toshiba is based on the next generation U-MOS IX-H semiconductor...
