GaN transistor demonstrates 97.5% efficiency PFC supply
A power supply design using the TPH3006PS JEDEC-qualified GaN on silicon, 600-V high electron mobility transistors (HEMTs), demonstrates 97.5%...
Discrete Semiconductors
LATEST ARTICLES
Transphorm announces Fumihide “Humi” Esaka joins as CEO
Transphorm Inc. today announced that Fumihide “Humi” Esaka will join Transphorm as its new CEO starting July 1,...
Amantys announces the PowerDrive partnership program with leading IGBT module manufacturers
Amantys made a statement of intent by partnering with a number of leading semiconductor...
Mouser and Advanced Thermal Solutions, Inc. (ATS) Sign Global Distribution Agreement
Mouser Electronics, Inc. today announced a new global agreement with Advanced Thermal Solutions, Inc. (ATS) to distribute high performance heat sinks and cooling...
International Rectifier commences commercial shipments of gallium nitride on silicon devices
International Rectifier Corporation today announced that it has qualified and shipped product built on its Gallium Nitride (GaN)-based power device technology platform for a home theater system manufactured by a leading consumer electronics...
Engineers create semiconductor using kitchen microwave
Your microwave at home might be able to deliver a batch of popcorn in less than five minutes, but did you know that it’s also capable of cooking up a plate full of...
