Breakthrough enables 50-A SiC power devices
The industry’s first 50-A, 1,700-V Z-FET SiC MOSFET is part of a family of SiC MOSFETs that provide a . ....
Discrete Semiconductors
LATEST ARTICLES
Nitronex awarded phase I SBIR from NASA to research X- and Ka- band GaN power amplifiers
DURHAM, NC (April 25, 2012) - Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based . ....
RF Micro Devices unveils rGaN-HV process technology for power device products and foundry customers
GREENSBORO, NC, April 26, 2012 (GLOBE NEWSWIRE) RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design . ....
Power MOSFET Avalanche Design Guidelines
To better understand and utilize power MOSFETs, it is important to explore the theory behind avalanche breakdown and to . ....
Balancing power parameters in LED apps
Low-power LED solutions typically consist of a single string of LEDs or a single input and output control point . ....
International Rectifier’s IR3550 — a big feat in a small footprint
The IR3550 PowIRstage is a pioneering device that features a synchronous buck gate driver, an integrated synchronous MOSFET, and . ....
