eGaN FET offers 100 V, 6 A with 30 mΩ max
The EPC2007 FET is a 1.87-mm2, 100-VDS, 6-A device with a maximum RDS(on) of 30 mΩ. It features 2.1 . ....
Discrete Semiconductors
LATEST ARTICLES
Silicon carbide MOSFETs: Superior switching technology for power electronics applications
In power electronics applications, the compound semiconductor silicon carbide (SiC) has been demonstrated in published literature [1] to be . ....
Innovative power semiconductor packaging for through-hole applications
Over the last 12 months hybrid (HEVs) and electric vehicles (EVs) seem to have been all the fashion and . ....
RF power LDMOS transistor suits UHF television apps
The MRFE6VP8600H RF power LDMOS transistor provides significant benefits for television transmitter manufacturers and broadcasters. For example, the transistor . ....
1200-V IGBTs reduce switching losses
The IRG7Pxxxxx family of 1,200-V insulated gate bipolar transistors (IGBTs) suit induction heating, uninterruptible power supplies, solar, and welding . ....
Schottky diode offered in TLM2D3D6 package
The CTLSH01-30 and CTLSH01-30L Low VF Schottky diodes are provided in a 0.32−mm profile TLM2D3D6 surface mount package. These . ....
