Silicon carbide JFETs target high-end audio
SJEP120R100A and SJEP120R063A silicon carbide (SiC) JFETs provide 15% lower cost, high linearity, and low distortion in high-end audio . ....
Discrete Semiconductors
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Second gen eGaN FET features 40 V, 16 mΩ
The EPC2014 eGaN FET is lead free, RoHS-compliant and halogen free. It is a 1.87 mm2, 40-VDS, 10−A device . ....
eGaN FET features 200-V, 100-mΩ power transistor
The EPC2012 second-generation eGaN FET power transistor is a 1.6 mm2 200-VDS device with a maximum RDS(on) of 100 . ....
60-V MOSFET improves power supply designs
The AON6242 60-V MOSFET reduces switching and conduction losses in system power supplies. It suits secondary-side synchronous rectification in . ....
MOSFETs suit heavy-load automotive apps
The AUIRFxxxxx family of automotive qualified MOSFETs target applications requiring low on-state resistance including heavy load applications used in . ....
Smart power modules becoming more efficient
Energy saving drives with brushless dc motors can be found everywhere, and the dust has settled somewhat, since the . ....
