Diodes’ half-bridge power block, integrating dual MOSFETs in a single 3.3 × 3.3-mm package, offers increased efficiency while reducing board space requirement by up
Combining the best attributes of Schottky and fast-recovery diodes, Nexperia’s SiGe rectifiers enable designers to use these parts in high-temperature and
Infineon adds a new family of StrongIRFET 40- to 60-V power MOSFETs in the D²PAK 7pin+ package, offering extremely low RDS(on) and higher current-carrying
Nexperia’s tiny MOSFETS are 36% smaller than previous-generation devices with the lowest RDS(on), targeting mobile and portable applications, including
Toshiba fabricates its new 80-V N-channel power MOSFETS on its latest-generation process that lowers drain-source on-resistance and improves the tradeoff between the
Vishay’s dual N-channel 60-V MOSFET delivers increased power density and efficiency for a range of applications, including battery management systems, plug-in and
SiC-based MOSFETS and Schottky barrier diodes reduce power losses and enable higher power density, while reducing the complexity of cooling systems and the overall